| PART |
Description |
Maker |
| EGN21A180IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN21A045I EGN21A045IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| QPC1006EVB |
0.15 ?2.8 GHz High Power GaN SP3T Switch
|
TriQuint Semiconductor
|
| CLE539W |
High Power GaN White LED Flat Window Can, Hermetically Sealed
|
ETC
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| BUX33B BUX33A |
HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS
|
Semelab
|
| 2SC2928 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| MAX900 MAX900ACPP MAX900ACWP MAX900AEPP MAX900AEWP |
High-Speed, Low-Power Voltage Comparators
High-Speed Low-Power Voltage Comparators
High-Speed / Low-Power Voltage Comparators
Octal Bus Transceivers With 3-State Outputs 20-LCCC -55 to 125
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFN21 Q62702-F1059 |
From old datasheet system
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
